DMP3105LVT-7 Diodes Inc., DMP3105LVT-7 Datasheet - Page 2

• Manufacturer Part Number: DMP3105LVT-7
• Description: MOSFET MOSFET BVDSS
• Manufacturer: Diodes Inc.

Specifications of DMP3105LVT-7

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: - 3.9 A
• Resistance Drain-source Rds (on): 75 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOT26-6
• Fall Time: 64 ns
• Forward Transconductance Gfs (max / Min): 5 S
• Gate Charge Qg: 19.8 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.15 W
• Rise Time: 17.7 ns
• Typical Turn-off Delay Time: 269 ns

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
Continuous Drain Current (Note 4) V
Continuous Drain Current (Note 5) V
Continuous Drain Current (Note 5) V
Maximum Continuous Body Diode Forward Current
Pulsed Drain Current (10us pulse, duty cycle=1%)
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
Total Gate Charge (V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMP3105LVT
Document number: DS35504 Rev. 2 - 2
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
Characteristic
GS
GS
= -4.5V)
= -10.0V)
@T
A
= 25°C unless otherwise specified
Characteristic
Characteristic
GS
GS
GS
GS
@T
= -10V
= -4.5V
= -10V
= -4.5V
@T
A
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
C
I
I
|Y
V
C
C
Q
D(on)
D(off)
GS(th)
Q
GSS
R
DSS
Q
Q
Steady
Steady
Steady
Steady
t
SD
oss
t
DSS
iss
rss
gd
State
State
State
State
fs
gs
r
f
G
g
g
|
www.diodes.com
Min
-0.5
-30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2 of 6
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
12.3
19.8
17.7
Typ
-0.9
-0.7
839
269
9.0
1.6
1.1
9.7
65
75
98
47
43
64
⎯
⎯
⎯
5
±100
Max
-100
-1.5
150
-1.0
⎯
75
98
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Symbol
Symbol
T
J,
V
V
R
R
R
I
P
P
GSS
DSS
I
I
I
I
I
DM
T
θ JA
θ JA
θ Jc
D
D
D
D
S
D
D
STG
Unit
mΩ
nA
nC
nA
pF
ns
V
V
S
V
Ω
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
I
D
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DS
DS
GS
-55 to +150
= -1A
Value
= -15V, I
Value
= -30V, V
= V
= -15V, V
= 0V, V
= -15V, I
= 0V, I
= ±12V, V
= -10V, I
= -4.5V, I
= -2.5V, I
= 0V, I
= -10V, V
1.15
1.75
23.4
±12
108
-30
3.1
2.5
2.7
2.2
3.9
3.1
3.3
2.7
2.2
20
72
GS
, I
Test Condition
D
S
GS
D
DMP3105LVT
= -250μA
D
= -1A
D
D
GS
D
D
GS
= -250μA
DD
DS
= -4.0A
= -4.0A
= -4.2A
= 0V, f = 1.0MHz
= -4.0A
= -3.0A
= 0V
= 0V
= -15V, R
= 0V
© Diodes Incorporated
November 2011
Units
Units
°C/W
°C/W
°C/W
°C
W
W
G
V
V
A
A
A
A
A
A
= 6Ω,