DMP3105LVT-7 Diodes Inc., DMP3105LVT-7 Datasheet - Page 4

• Manufacturer Part Number: DMP3105LVT-7
• Description: MOSFET MOSFET BVDSS
• Manufacturer: Diodes Inc.

Specifications of DMP3105LVT-7

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: - 3.9 A
• Resistance Drain-source Rds (on): 75 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOT26-6
• Fall Time: 64 ns
• Forward Transconductance Gfs (max / Min): 5 S
• Gate Charge Qg: 19.8 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.15 W
• Rise Time: 17.7 ns
• Typical Turn-off Delay Time: 269 ns

DMP3105LVT
Document number: DS35504 Rev. 2 - 2
100000
10000
1.4
1.2
0.8
0.6
0.4
0.2
1000
10
100
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
8
6
4
2
0
1
0
-50
10
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
0
1
0
-25
T , JUNCTION TEMPERATURE ( C)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Gate Charge Characteristics
J
5
DS
5
0
10
25
Q -(nC)
G
10
50
15
I = -250µA
D
75
20
100
15
I = -1mA
D
T =
°
A
T = 150 C
25
125 150
T =
A
A
85 C
°
25 C
°
°
20
30
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10000
0.01
1000
100
0.1
20
16
12
100
10
8
4
0
10
0.4
0.01
1
0
T
T = 25 C
Single Pulse
R
Limited
f = 1MHz
J(MAX)
A
DS(ON)
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
°
-V , DRAIN-SOURCE VOLTAGE (V)
= 150 C
-V , DRAIN-SOURCE VOLTAGE (V)
SD
Fig. 10 Typical Junction Capacitance
Fig. 12 SOA, Safe Operation Area
5
DS
DS
0.6
0.1
°
I (A) @ DC
I (A) @P =10s
D
D
10
I (A) @P =1s
D
I (A) @P =100ms
D
W
I (A) @P =1ms
D
0.8
W
1
15
I (A) @P =10ms
D
W
T = 25 C
A
W
W
DMP3105LVT
°
20
C
OSS
1
10
C
© Diodes Incorporated
ISS
25
November 2011
I (A) @
P =10µs
D
C
W
RSS
100
1.2
30