DMN3730U-7 Diodes Inc., DMN3730U-7 Datasheet - Page 5

• Manufacturer Part Number: DMN3730U-7
• Description: MOSFET MOSFET BVDSS
• Manufacturer: Diodes Inc.

Specifications of DMN3730U-7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.94 A
• Resistance Drain-source Rds (on): 460 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23-3
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 40 mS
• Gate Charge Qg: 1.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.45 W
• Rise Time: 2.8 ns
• Typical Turn-off Delay Time: 38 ns

DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
1.2
1.0
0.8
0.6
0.4
0.2
100
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
10
0
1
-50 -25
8
6
4
2
0
0
0
T , AMBIENT TEMPERATURE (°C)
0.5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Gate-Charge Characteristics
C
5
A
rss
DS
Q , TOTAL GATE CHARGE (nC)
Fig. 12 Typical Total Capacitance
g
0
C
oss
C
10
1
iss
25
V
50
DS
1.5
I = 1A
D
15
I = 250µA
D
= 15V
75
2
20
I = 1mA
D
100
f = 1MHz
2.5
25
125 150
3
30
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10,000
1,000
2.0
1.6
1.2
0.8
0.4
100
10
0
1
0
0
Fig. 11 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
0.2
SD
V , DRAIN-SOURCE VOLTAGE (V)
Diodes Incorporated
5
DS
Fig. 13 Typical Leakage Current
A Product Line of
vs. Drain-Source Voltage
0.4
10
0.6
15
T = 25°C
A
T = 150°C
T = 125°C
T = 85°C
A
A
0.8
T = 25°C
A
A
20
DMN3730U
1
25
© Diodes Incorporated
1.2
July 2011
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