DMN3730U-7 Diodes Inc., DMN3730U-7 Datasheet - Page 6

• Manufacturer Part Number: DMN3730U-7
• Description: MOSFET MOSFET BVDSS
• Manufacturer: Diodes Inc.

Specifications of DMN3730U-7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.94 A
• Resistance Drain-source Rds (on): 460 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23-3
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 40 mS
• Gate Charge Qg: 1.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.45 W
• Rise Time: 2.8 ns
• Typical Turn-off Delay Time: 38 ns

Package Outline Dimensions
Suggested Pad Layout
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
Z
K
J
F
Y
G
A
H
D
X
B C
K1
L
E
C
M
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Dimensions Value (in mm)
Dim
Z
X
Y
C
E
K1
G
M
A
B
C
D
H
K
α
F
J
L
All Dimensions in mm
Diodes Incorporated
0.013
0.903
0.085
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
Min
0°
-
A Product Line of
SOT23
1.35
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.18
2.9
0.8
0.9
2.0
8°
-
0.915
0.535
0.400
0.40
1.30
2.40
1.83
2.90
0.05
1.00
0.55
0.11
Typ
-
DMN3730U
© Diodes Incorporated
July 2011