PSMN9R5-100BS,118 NXP Semiconductors, PSMN9R5-100BS,118 Datasheet - Page 11
PSMN9R5-100BS,118
Manufacturer Part Number
PSMN9R5-100BS,118
Description
MOSFET N-CH 100 V 9.6 MOHM MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN9R5-100BS118.pdf
(14 pages)
Specifications of PSMN9R5-100BS,118
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
90 V
Gate-source Breakdown Voltage
4.5 V
Continuous Drain Current
89 A
Resistance Drain-source Rds (on)
9.6 mOhms
Mounting Style
Through Hole
Package / Case
D2PAK
Power Dissipation
211 W
Factory Pack Quantity
800
NXP Semiconductors
8. Revision history
Table 7.
PSMN9R5-100BS
Product data sheet
Document ID
PSMN9R5-100BS v.2
Modifications:
PSMN9R5-100BS v.1
Revision history
20120302
20111025
Release date
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 2 — 2 March 2012
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK
Change notice
-
-
PSMN9R5-100BS
Supersedes
PSMN9R5-100BS v.1
-
© NXP B.V. 2012. All rights reserved.
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