PSMN9R5-100BS,118 NXP Semiconductors, PSMN9R5-100BS,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN9R5-100BS,118
• Description: MOSFET N-CH 100 V 9.6 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 90 V
• Gate-source Breakdown Voltage: 4.5 V
• Continuous Drain Current: 89 A
• Resistance Drain-source Rds (on): 9.6 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 211 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN9R5-100BS
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
10
(A)
10
10
I
D
100
10
−1
80
60
40
20
3
2
1
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
0
Limit R
50
DSon
= V
DS
100
/ I
D
150
All information provided in this document is subject to legal disclaimers.
T
mb
003aae016
10
(°C)
DC
200
Rev. 2 — 2 March 2012
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
2
t
1 ms
100 ms
10 ms
p
100 μs
= 10 μs
50
PSMN9R5-100BS
100
V
DS
(V)
150
© NXP B.V. 2012. All rights reserved.
T
003aae017
mb
03aa16
(°C)
10
200
3
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