NTLUS3A18PZTAG ON Semiconductor, NTLUS3A18PZTAG Datasheet

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NTLUS3A18PZTAG

Manufacturer Part Number
NTLUS3A18PZTAG
Description
MOSFET T4S PCH 20/8V IN 2X2 UDFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTLUS3A18PZTAG

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Continuous Drain Current
- 5.1 A
Resistance Drain-source Rds (on)
90 mOhms
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
UDFN-6
Power Dissipation
1.7 W

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTLUS3A18PZTAG
Manufacturer:
ON Semiconductor
Quantity:
1 750
Company:
Part Number:
NTLUS3A18PZTAG
Quantity:
2 500
NTLUS3A18PZ
Power MOSFET
−20 V, −8.2 A, Single P−Channel,
2.0x2.0x0.55 mm mCoolt UDFN Package
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
2. Surface-mounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 3
MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Continuous Drain
Current (Note 1)
Power Dissipa-
tion (Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage
Temperature
ESD (HBM, JESD22−A114)
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Conduction
Compliant
Products, such as Cell Phones, Media Tablets, PMP, DSC, GPS, and
Others
UDFN Package with Exposed Drain Pads for Excellent Thermal
Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving
Ultra Low R
ESD Diode−Protected Gate
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Optimized for Power Management Applications for Portable
Battery Switch
High Side Load Switch
[2 oz] including traces).
of 30 mm
2
, 2 oz. Cu.
DS(on)
Parameter
Steady
Steady
Steady
t ≤ 5 s
t ≤ 5 s
State
State
State
(T
J
= 25°C unless otherwise stated)
T
T
T
T
T
T
T
T
tp = 10 ms
A
A
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
V
V
T
V
I
P
P
T
DSS
STG
ESD
T
I
I
DM
I
GS
D
D
S
J
D
D
L
,
Value
−12.2
-55 to
2000
±8.0
−8.2
−5.9
−5.1
−3.7
−1.7
−20
−25
150
260
1.7
3.8
0.7
1
Unit
°C
°C
W
W
V
V
A
A
A
V
A
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Pin 1
V
(BR)DSS
−20 V
S
(*Note: Microdot may be in either location)
G
ORDERING INFORMATION
D
AC = Specific Device Code
M = Date Code
G = Pb−Free Package
PIN CONNECTIONS
http://onsemi.com
P−Channel MOSFET
CASE 517BG
18 mW @ −4.5 V
25 mW @ −2.5 V
50 mW @ −1.8 V
90 mW @ −1.5 V
(mCOOL])
R
UDFN6
MOSFET
(Top View)
DS(on)
Publication Order Number:
MARKING DIAGRAM
MAX
D
S
1
NTLUS3A18PZ/D
AC MG
G
I
D
−8.2 A
MAX

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NTLUS3A18PZTAG Summary of contents

Page 1

NTLUS3A18PZ Power MOSFET −20 V, −8.2 A, Single P−Channel, 2.0x2.0x0.55 mm mCoolt UDFN Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction • Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving • Ultra Low R ...

Page 2

THERMAL RESISTANCE RATINGS Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient – t ≤ (Note 3) Junction-to-Ambient – Steady State min Pad (Note 4) 3. Surface-mounted on FR4 board using pad size (Cu area = 1.127 ...

Page 3

−2 −1 0.0 0.5 1.0 1.5 2.0 2.5 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.10 0.09 ...

Page 4

C 2800 iss 2400 2000 1600 1200 800 C oss 400 C rss −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000.0 t d(off) 100 ...

Page 5

... DEVICE ORDERING INFORMATION Device NTLUS3A18PZTAG NTLUS3A18PZTBG NTLUS3A18PZTCG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS V = − Single Pulse T = 25°C ...

Page 6

... PACKAGE 0.65 PITCH *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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