NTLUS3A18PZTAG ON Semiconductor, NTLUS3A18PZTAG Datasheet - Page 2

• Manufacturer Part Number: NTLUS3A18PZTAG
• Description: MOSFET T4S PCH 20/8V IN 2X2 UDFN
• Manufacturer: ON Semiconductor

Specifications of NTLUS3A18PZTAG

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 5.1 A
• Resistance Drain-source Rds (on): 90 mOhms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: UDFN-6
• Power Dissipation: 1.7 W

3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm
THERMAL RESISTANCE RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
DRAIN-SOURCE DIODE CHARACTERISTICS
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
V
J
V
V
(BR)DSS
Symbol
Q
= 25°C unless otherwise specified)
V
GS(TH)
R
t
(BR)DSS
Q
Parameter
t
d(OFF)
C
C
I
I
d(ON)
GS(TH)
C
V
G(TOT)
Q
Q
Q
GSS
DS(on)
t
DSS
g
G(TH)
RR
OSS
t
t
RSS
t
t
SD
ISS
FS
GD
a
b
GS
r
f
RR
/T
/T
J
J
http://onsemi.com
V
I
V
V
DS
S
V
V
GS
GS
V
= −1.0 A
GS
I
GS
V
V
V
V
V
V
GS
V
D
= −20 V
V
2
GS
GS
GS
GS
I
DS
GS
GS
= 0 V,
V
= 0 V,
D
= −250 mA, ref to 25°C
DS
= 0 V, dIs/dt = 100 A/ms,
= −4.5 V, V
GS
= −4.5 V, V
= −4.0 A, R
Test Condition
= 0 V, V
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= −1.5 V, I
= 0 V, I
= V
= −5 V, I
V
= 0 V, f = 1 MHz,
I
I
S
D
DS
DS
= −1.0 A
= −4.0 A
, I
= −15 V
D
GS
D
D
= −250 mA
DD
DS
= −250 mA
D
D
D
D
G
= −3.0 A
= ±5.0 V
T
= −7.0 A
= −5.0 A
= −3.0 A
= −1.0 A
T
= −15 V,
= 1 W
T
= −15 V;
J
J
J
= 125°C
= 25°C
= 25°C
2
, 2 oz. Cu.
Min
−20
−0.4
Symbol
R
R
R
0.63
0.50
26.1
10.2
15.9
2240
Typ
+10
14.6
150
θJA
θJA
θJA
240
210
8.6
3.0
1.0
2.9
8.8
15
88
19
25
40
40
28
12
Max
−1.0
−1.0
1.0
±5
18
25
50
90
Max
189
72
33
mV/°C
mV/°C
Units
°C/W
mA
mA
mW
Unit
ns
ns
nC
nC
pF
V
V
V
S