NTDV3055L104T4G ON Semiconductor, NTDV3055L104T4G Datasheet - Page 3

• Manufacturer Part Number: NTDV3055L104T4G
• Description: MOSFET NFET 60V 12A 0.104R
• Manufacturer: ON Semiconductor

Specifications of NTDV3055L104T4G

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 12 A
• Resistance Drain-source Rds (on): 104 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Fall Time: 80 ns
• Gate Charge Qg: 20 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 48 W
• Rise Time: 210 ns
• Typical Turn-off Delay Time: 40 ns

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTD3055L104G
NTD3055L104−1G
NTD3055L104T4G
NTDV3055L104−1G
NTDV3055L104T4G
Device
http://onsemi.com
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
DPAK−3
DPAK−3
DPAK
DPAK
DPAK
3
2500 / Tape & Reel
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
75 Units / Rail
Shipping
†