NTDV3055L104T4G ON Semiconductor, NTDV3055L104T4G Datasheet - Page 9

• Manufacturer Part Number: NTDV3055L104T4G
• Description: MOSFET NFET 60V 12A 0.104R
• Manufacturer: ON Semiconductor

Specifications of NTDV3055L104T4G

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 12 A
• Resistance Drain-source Rds (on): 104 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Fall Time: 80 ns
• Gate Charge Qg: 20 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 48 W
• Rise Time: 210 ns
• Typical Turn-off Delay Time: 40 ns

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SEATING
PLANE
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
3
A
K
D
0.13 (0.005)
3 PL
J
M
T
C
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PACKAGE DIMENSIONS
USA/Canada
Phone: [phone]
Phone: 81−3−5773−3850
E
H
http://onsemi.com
CASE 369D−01
ISSUE C
IPAK
9
Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
ANSI Y14.5M, 1982.
STYLE 2:
DIM
PIN 1. GATE
A
B
C
D
E
G
H
K
R
S
V
F
J
Z
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.350
0.180
0.025
0.035
0.155
MIN
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.380
0.215
0.040
0.050
MAX
−−−
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
8.89
4.45
0.63
0.89
3.93
MIN
2.29 BSC
NTD3055L104/D
MAX
6.35
6.73
2.38
0.88
0.58
1.14
1.01
0.58
9.65
5.45
1.01
1.27
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