DMP1022UFDE-7 Diodes Inc., DMP1022UFDE-7 Datasheet - Page 2

• Manufacturer Part Number: DMP1022UFDE-7
• Description: MOSFET 12V P-CH ENH Mode 16mOhm 4.5V -9.1A
• Manufacturer: Diodes Inc.

Specifications of DMP1022UFDE-7

• Rohs: yes

Thermal Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current
Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes:
DMP1022UFDE
D
atasheet number: DS35477 Rev. 9 - 2
0.01
100
0.1
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
10
1
0.01
-V , DRAIN-SOURCE VOLTAGE (V)
R
Limited
DS(on)
DS
Fig. 1 SOA, Safe Operation Area
0.1
P
DC
W
(@T
P
= 10s
P
W
W
P
A
= 1s
= 100ms
W
Characteristic
= +25°C, unless otherwise specified.)
P = 1ms
= 10ms
GS
W
Characteristic
P
1
W
= -4.5V
= 100µs
10
P
W
= 10 s
Steady
State
t<5s
µ
100
www.diodes.com
2 of 7
T
T
T
T
T
T
A
A
A
A
A
C
= +25°C
= +70°C
= +25°C
= +70°C
= +25°C
= +25°C
Steady state
Steady state
Steady state
T
T
T
T
A
A
A
A
= +25°C
= +70°C
= +25°C
= +70°C
t<5s
t<5s
100
0.0001
90
80
70
60
50
40
30
20
10
0
Fig. 2 Single Pulse Maximum Power Dissipation
0.001 0.01
Symbol
V
V
I
I
GSS
DSS
I
I
DM
SM
t1, PULSE DURATION TIME (sec)
I
D
D
S
Symbol
T
J,
R
R
R
P
P
T
θ JC
θ JA
θ JA
D
D
STG
0.1
Value
-11.2
-55 to +150
-9.1
-7.2
-9.0
-2.5
-7.1
-12
-90
-50
±8
1
Value
0.66
0.42
2.03
189
123
1.3
9.3
Single Pulse
R
R
T - T = P * R
61
40
J
θ
θ
DMP1022UFDE
JA
JA(t)
10
= 61 C/W
A
= r
°
(t)
* R
100 1,000
θ
θ
JA(t)
© Diodes Incorporated
JA
Units
Units
°C/W
°C/W
V
V
A
A
A
A
A
°C
W
W
July 2012