DMP1022UFDE-7 Diodes Inc., DMP1022UFDE-7 Datasheet - Page 3

• Manufacturer Part Number: DMP1022UFDE-7
• Description: MOSFET 12V P-CH ENH Mode 16mOhm 4.5V -9.1A
• Manufacturer: Diodes Inc.

Specifications of DMP1022UFDE-7

• Rohs: yes

Electrical Characteristics
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
On-State Drain Current
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
Continuous Source-Drain Diode Current (Note 6)
Pulse Diode Forward Current (Note 8)
Bodyy Diode Reverse Recovery Time (Note 8)
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Body Diode Reverse Recovery Charge (Note 8)
Notes:
DMP1022UFDE
D
GS(th)
atasheet number: DS35477 Rev. 9 - 2
Temperature Coefficient
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing
0.001
Characteristic
0.01
0.00001
0.1
1
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
J
0.0001
= +25°C
(@T
A
= +25°C, unless otherwise specified.)
0.001
ΔV
Fig. 3 Transient Thermal Resistance
t1, PULSE DURATION TIMES (sec)
Symbol
R
BV
V
GS(th)
I
0.01
DS (ON)
t
t
I
I
D(ON)
|Y
C
V
C
C
Q
V
GS(th)
Q
D(on)
D(off)
GSS
I
DSS
Q
Q
Q
R
SM
I
t
t
t
SD
oss
t
t
SD
rss
S
rr
DSS
iss
gd
a
b
fs
gs
r
f
www.diodes.com
g
g
g
rr
|
/ΔT
J
3 of 7
-0.35
0.1
Min
-12
-10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-
D = 0.9
2953
28.4
25.3
Typ
-0.8
756
678
117
-0.8
2.5
8.6
2.3
7.2
12
15
20
23
46
12
20
28
93
28
10
18
13
—
—
—
—
—
—
—
—
1
Max
21.5
42.6
-0.8
-1.2
176
139
-1.2
-2.5
-7.1
-50
±2
16
26
32
95
18
38
30
42
56
26
—
-1
—
—
—
—
—
—
—
—
—
-
10
R
R
Duty Cycle, D=t1/ t2
θ
θJA
mV/°C
JA
Unit
mΩ
nC
nC
µA
µA
pF
(t)=r(t) * R
=61°C/W
ns
ns
V
V
A
S
V
Ω
V
A
100
V
V
V
V
I
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
I
V
R
V
T
T
I
θ
D
D
S
JA
GS
DS
GS
DS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DS
GS
GS
DS
GS
A
C
G
= -250μA
= -10A
= -9.8A, dI/dt = 100A/μs
= +25°C
= +25°C
= 1Ω, R
= 0V, I
= -12V, V
= ±5V, V
= V
= -4.5V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -1.5V, I
= -1.2V, I
= -4V, I
= 0V, I
= -4V, V
= 0V, V
= -5V, V
= -4.5V, V
= -4V, V
= 0V, I
DMP1022UFDE
GS
Test Condition
1,000
, I
D
S
S
L
D
GS
D
GS
DS
GS
= -250μA
= -8A
= 0.4Ω, I
= -9.8A
DS
= -8.2A
D
D
D
D
D
GS
= -250μA
DS
DS
—
= 0V, f = 1MHz
= -8.2A
= -7.2A
= -6.6A
= -1A
= -1A
= 0V,
= -4, I
= -4.5V,
© Diodes Incorporated
= 0V
= 0V
< -5A
= -4V,
D
D
July 2012
= -10A
= -9.8A