CTLDM3590 TR Central Semiconductor, CTLDM3590 TR Datasheet - Page 2

• Manufacturer Part Number: CTLDM3590 TR
• Description: MOSFET SMD Sm Signal Mosfet N-Channel Enh Mode
• Manufacturer: Central Semiconductor

Specifications of CTLDM3590 TR

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 160 mA
• Resistance Drain-source Rds (on): 3 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TLM3D6D8
• Forward Transconductance Gfs (max / Min): 1.3 S
• Gate Charge Qg: 0.458 nC
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 125 mW

CTLDM3590
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
TLM3D6D8 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
(Bottom View)
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 1
R3 (27-September 2012)
w w w. c e n t r a l s e m i . c o m