CTLDM3590 TR Central Semiconductor, CTLDM3590 TR Datasheet - Page 3
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CTLDM3590 TR
Manufacturer Part Number
CTLDM3590 TR
Description
MOSFET SMD Sm Signal Mosfet N-Channel Enh Mode
Manufacturer
Central Semiconductor
Datasheet
1.CTLDM3590_TR.pdf
(3 pages)
Specifications of CTLDM3590 TR
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
160 mA
Resistance Drain-source Rds (on)
3 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TLM3D6D8
Forward Transconductance Gfs (max / Min)
1.3 S
Gate Charge Qg
0.458 nC
Minimum Operating Temperature
- 65 C
Power Dissipation
125 mW
CTLDM3590
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (27-September 2012)
w w w. c e n t r a l s e m i . c o m