CTLDM304P-M832DS TR Central Semiconductor, CTLDM304P-M832DS TR Datasheet

CTLDM304P-M832DS TR

Manufacturer Part Number

CTLDM304P-M832DS TR

Description

MOSFET SMD Sm Signal Mosfet Dual P-Ch Enhanced

Manufacturer

Central Semiconductor

Datasheet

1.CTLDM304P-M832DS_TR.pdf (2 pages)

Specifications of CTLDM304P-M832DS TR

Rohs

yes

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

4.2 A

Resistance Drain-source Rds (on)

120 mOhms

Configuration

Dual

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

TLM832DS

Gate Charge Qg

6.4 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

1.65 W

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APPLICATIONS:

• Switching circuits

• DC-DC converters

• Power management

MAXIMUM RATINGS: (T A =25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T A =25°C unless otherwise noted)

SYMBOL

I GSSF , I GSSR

I DSS

BV DSS

V GS(th)

r DS(ON)

Q g(tot)

Q gs

Q gd

C rss

C iss

C oss

t on

t off

ENHANCEMENT-MODE

CTLDM304P-M832DS

DUAL P-CHANNEL

SURFACE MOUNT

SILICON MOSFET

TLM832DS CASE

TEST CONDITIONS

V GS =12V, V DS =0

V DS =24V, V GS =0

V GS =0, I D =250μA

V GS =V DS , I D =250μA

V GS =10V, I D =4.2A

V GS =4.5V, I D =4.0A

V GS =2.5V, I D =1.0A

V DS =15V, V GS =4.5V, I D =4.0A

V DS =15V, V GS =0, f=1.0MHz

V DD =15V, V GS =10V, I D =1.0A

R L =3.6Ω, R G =6.0Ω

V DD =15V, V GS =10V, I D =1.0A

R L =3.6Ω, R G =6.0Ω

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CTLDM304P-M832DS

is a dual enhancement-mode P-Channel silicon MOSFET

designed for high speed pulsed amplifier and driver

applications. This energy efficient MOSFET offers

beneficially low r DS(ON) , low gate charge, and low

threshold voltage.

MARKING CODE: C430

FEATURES:

• Low r DS(ON)

• High drain current

• Low gate charge

SYMBOL

T J , T stg

V GS

V DS

I DM

Θ JA

MIN

P D

0.7

I D

TYP

760

1.0

6.4

1.8

1.4

-55 to +150

1.65

4.2

MAX

100

120

1.0

1.3

w w w. c e n t r a l s e m i . c o m

R1 (9-October 2012)

UNITS

°C/W

mΩ

μA

°C

Related parts for CTLDM304P-M832DS TR

CTLDM304P-M832DS TR Summary of contents

Page 1

... V DD =15V =10V =1. =3.6Ω =6.0Ω DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM304P-M832DS is a dual enhancement-mode P-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low r DS(ON) , low gate charge, and low threshold voltage ...

Page 2

... CTLDM304P-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TLM832DS CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate Q1 5) Drain Q2 2) Source Q1 6) Drain Q2 3) Gate Q2 7) Drain Q1 4) Source Q2 8) Drain Q1 MARKING CODE: C430 ...

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