CTLDM304P-M832DS TR Central Semiconductor, CTLDM304P-M832DS TR Datasheet - Page 2

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CTLDM304P-M832DS TR

Manufacturer Part Number
CTLDM304P-M832DS TR
Description
MOSFET SMD Sm Signal Mosfet Dual P-Ch Enhanced
Manufacturer
Central Semiconductor
Datasheet

Specifications of CTLDM304P-M832DS TR

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
4.2 A
Resistance Drain-source Rds (on)
120 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TLM832DS
Gate Charge Qg
6.4 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
1.65 W
w w w. c e n t r a l s e m i . c o m
ENHANCEMENT-MODE
CTLDM304P-M832DS
DUAL P-CHANNEL
SURFACE MOUNT
SILICON MOSFET
TLM832DS CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Gate Q2
4) Source Q2
MARKING CODE: C430
PIN CONFIGURATION
5) Drain Q2
6) Drain Q2
7) Drain Q1
8) Drain Q1
R1 (9-October 2012)

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