IRF7478TR International Rectifier, IRF7478TR Datasheet - Page 3

• Manufacturer Part Number: IRF7478TR
• Description: MOSFET MOSFET, 60V, 7.6A, 26 mOhm, 21 nC Qg, SO-8
• Manufacturer: International Rectifier

Specifications of IRF7478TR

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 26 mOhms
• Configuration: Single Quad Drain Triple Source
• Package / Case: SOIC-8
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Typical Turn-off Delay Time: 44 ns

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100
10
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
100
0.1
10
1
TOP
BOTTOM
2.5
V
DS
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
T J = 150°C
, Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
1
T J = 25°C
3.0
2.7V
20µs PULSE WIDTH
T = 25 C
J
V DS = 25V
20µs PULSE WIDTH
10
3.5
°
100
4.0
Fig 2. Typical Output Characteristics
100
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
7.0A
V
DS
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
T , Junction Temperature ( C)
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20
40
2.7V
60
IRF7478
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
10V
3
100