IRF7478TR International Rectifier, IRF7478TR Datasheet - Page 4

• Manufacturer Part Number: IRF7478TR
• Description: MOSFET MOSFET, 60V, 7.6A, 26 mOhm, 21 nC Qg, SO-8
• Manufacturer: International Rectifier

Specifications of IRF7478TR

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 26 mOhms
• Configuration: Single Quad Drain Triple Source
• Package / Case: SOIC-8
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Typical Turn-off Delay Time: 44 ns

IRF7478
100000
10000
4
1000
100
10
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 150 C
J
V
V DS , Drain-to-Source Voltage (V)
SD
0.6
Forward Voltage
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
T = 25 C
J
1.0
= C gs + C gd , C ds
Ciss
Coss
Crss
10
°
1.4
f = 1 MHZ
V
1.8
GS
SHORTED
= 0 V
2.2
100
1000
100
10
0.1
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0
Fig 6. Typical Gate Charge Vs.
1
I =
D
T
T
Single Pulse
A
J
= 25 C
= 150 C
4.2A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
°
°
G
10
, Drain-to-Source Voltage (V)
10
BY R
V
V
V
DS
DS
DS
20
DS(on)
= 48V
= 30V
= 12V
10us
100us
1ms
10ms
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100
30
1000
40