BUK7628-100A /T3 NXP Semiconductors, BUK7628-100A /T3 Datasheet

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BUK7628-100A /T3

Manufacturer Part Number
BUK7628-100A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7628-100A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
47 A
Resistance Drain-source Rds (on)
0.028 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
45 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
166 W
Rise Time
70 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
83 ns
Part # Aliases
BUK7628-100A,118
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK7628-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
AEC Q101 compliant
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
T
V
T
I
R
T
D
j
mb
GS
j
j(init)
GS
≥ 25 °C; T
= 25 °C
= 30 A; V
= 25 °C
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
sup
j
D
≤ 175 °C
GS
= 25 A;
≤ 25 V;
= 5 V;
Low conduction losses due to low
on-state resistance
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
20
-
166
Max Unit
100
47
28
45
V
A
W
mΩ
mJ

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BUK7628-100A /T3 Summary of contents

Page 1

... BUK7628-100A N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A Graphic symbol mbb076 Version SOT404 © NXP B.V. 2011. All rights reserved ...

Page 3

... D (%) 150 200 0 T (° Fig 2. Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET Min - - - -55 - Ω 003aaf150 50 100 ...

Page 4

... −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET 100 140 unclamped inductive load D Normalised drain-source non-repetitive avalanche energy rating; avalanche energy as a ...

Page 5

... P 0.02 − −3 10 −7 −6 −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET Min Typ - - - 50 003aaf156 t p δ − (s) p ...

Page 6

... ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A Min Typ Max Unit 100 - - 4 ...

Page 7

... V (V) GS Fig 10. Transfer characteristics: drain current as a 003aaf161 60 80 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET 65 5.5 6.0 DS(on) (mΩ ° ...

Page 8

... Fig 16. Gate-source voltage as a function of gate 100 175 ° 0.2 0.4 0.6 0.8 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET −1 −2 − typical −4 −5 − ° ...

Page 9

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. SOT404 05-02-11 06-03- ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7628-100A separated from data sheet BUK7528_7628-100A_1. Product specification All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A ...

Page 11

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 April 2011 Document identifier: BUK7628-100A ...

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