SST25VF016B-75-4I-S2AF Microchip Technology, SST25VF016B-75-4I-S2AF Datasheet - Page 2
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SST25VF016B-75-4I-S2AF
Manufacturer Part Number
SST25VF016B-75-4I-S2AF
Description
IC FLASH SER 16M 75MHZ SPI 8SOIC
Manufacturer
Microchip Technology
Specifications of SST25VF016B-75-4I-S2AF
Memory Type
FLASH
Memory Size
16M (2M x 8)
Format - Memory
FLASH
Speed
75MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Ic Interface Type
SPI
Clock Frequency
80MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
SOIC
No. Of Pins
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SST25VF016B-75-4I-S2AF
Manufacturer:
SHARP
Quantity:
1 200
Company:
Part Number:
SST25VF016B-75-4I-S2AF
Manufacturer:
SST/44
Quantity:
5 288
Company:
Part Number:
SST25VF016B-75-4I-S2AF
Manufacturer:
MICROCHIP
Quantity:
3 504
Part Number:
SST25VF016B-75-4I-S2AF
Manufacturer:
SST
Quantity:
20 000
Company:
Part Number:
SST25VF016B-75-4I-S2AF-T
Manufacturer:
Microchip Technology
Quantity:
1 650
A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
Product Description
SST’s 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low
pin-count package which occupies less board space and ultimately lowers total system costs. The
SST25VF016B devices are enhanced with improved operating frequency and even lower power con-
sumption than the original SST25VFxxxA devices. SST25VF016B SPI serial flash memories are man-
ufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell
design and thick-oxide tunneling injector attain better reliability and manufacturability compared with
alternate approaches.
The SST25VF016B devices significantly improve performance and reliability, while lowering power
consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for
SST25VF016B. The total energy consumed is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy consumed during any Erase or Program operation
is less than alternative flash memory technologies.
The SST25VF016B device is offered in both 8-lead SOIC (200 mils) and 8-contact WSON (6mm x
5mm) packages. See Figure 2 for pin assignments.
2
16 Mbit SPI Serial Flash
SST25VF016B
S71271-04-000
Data Sheet
01/11