PSMN005-30K /T3 NXP Semiconductors, PSMN005-30K /T3 Datasheet - Page 10

• Manufacturer Part Number: PSMN005-30K /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN005-30K /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.5 W
• Rise Time: 16 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 65 ns
• Part # Aliases: PSMN005-30K,518

NXP Semiconductors
8. Revision history
Table 7.
PSMN005-30K
Product data sheet
Document ID
PSMN005-30K v.2
Modifications:
PSMN005-30K_1
Revision history
20111222
20091117
Release date
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 December 2011
Data sheet status
Product data sheet
Product data sheet
N-channel TrenchMOS SiliconMAX logic level FET
Change notice
-
-
PSMN005-30K
Supersedes
PSMN005-30K_1
-
© NXP B.V. 2011. All rights reserved.
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