PSMN005-30K /T3 NXP Semiconductors, PSMN005-30K /T3 Datasheet - Page 6

• Manufacturer Part Number: PSMN005-30K /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN005-30K /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.5 W
• Rise Time: 16 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 65 ns
• Part # Aliases: PSMN005-30K,518

NXP Semiconductors
PSMN005-30K
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
D
10
60
40
20
1
-1
-2
-4
-5
-6
-3
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
0.2
10 V
1
min
4.5 V
0.4
2
typ
0.6
3
V
0.8
GS
All information provided in this document is subject to legal disclaimers.
max
V
V
GS
4 V
3.8 V
3.6 V
3.4 V
3.2 V
= 3 V
DS
03ah06
03af66
(V)
(V)
Rev. 2 — 22 December 2011
1
4
Fig 6.
Fig 8.
N-channel TrenchMOS SiliconMAX logic level FET
V
(A)
I
GS(th)
(V)
D
60
40
20
0
4
3
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
0
V
DS
> I
D
1
× R
T
DSon
j
= 150 °C
20
2
PSMN005-30K
min
max
typ
3
100
25 °C
© NXP B.V. 2011. All rights reserved.
T
4
j
V
(°C)
GS
03ah08
03af65
(V)
180
5
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