TP2540N3-P013-G Supertex, TP2540N3-P013-G Datasheet
TP2540N3-P013-G
Specifications of TP2540N3-P013-G
Related parts for TP2540N3-P013-G
TP2540N3-P013-G Summary of contents
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... MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally- induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired ...
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... Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V t (ON) t d(ON) 0V OUTPUT 10% VDD Supertex inc Power Dissipation (pulsed) O † A (A) (W) -86 -0.6 0. 25°C unless otherwise specified) ...
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... Typical Performance Curves Supertex inc. ° ° ° ° ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 ° ● Tel: 408-222-8888 ● www.supertex.com TP2535 ° ...
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... DS -1.6 -1.2 -0.8 -0 (volts) GS Capacitance vs. Drain-to-Source Voltage 200 f = 1MHz 150 100 50 C RSS 0 0 -10 -20 V (volts) DS Supertex inc. (cont.) 100 150 -6 -8 -10 C ISS -30 -40 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Drain Current 100 V = -4. -10V ...
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... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...