TP2540N3-G Supertex, TP2540N3-G Datasheet

TP2540N3-G

Manufacturer Part Number

TP2540N3-G

Description

MOSFET Small Signal 400V 25Ohm

Manufacturer

Supertex

Datasheet

1.TP2540N8-G.pdf (5 pages)

Specifications of TP2540N3-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

25 Ohm @ 10 V

Drain-source Breakdown Voltage

400 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.086 A

Power Dissipation

740 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

Supertex inc.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

Low threshold (-2.4V max.)

High input impedance

Low input capacitance (125pF max.)

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

TP2535

Device

Supertex inc.

Package Option

TP2535N3-G

●

TO-92

1235 Bordeaux Drive, Sunnyvale, CA 94089

P-Channel Enhancement Mode

Vertical DMOS FETs

-55°C to +150°C

+300°C

Value

±20V

DGS

DSS

-350

(V)

/BV

DGS

General Description

This low threshold enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally-

induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching

speeds are desired.

Pin Conﬁguration

Product Marking

Package may or may not include the following marks: Si or

●

Y Y W W

2 5 3 5

SiT P

Tel: 408-222-8888

(max)

DS(ON)

(Ω)

YY = Year Sealed

WW = Week Sealed

SOURCE

TO-92 (N3)

●

(max)

www.supertex.com

-2.4

= “Green” Packaging

GS(th)

(V)

DRAIN

GATE

TP2535

(min)

-0.4

D(ON)

(A)

Related parts for TP2540N3-G

TP2540N3-G Summary of contents

Page 1

... MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally- induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired ...

Page 2

... Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V t (ON) t d(ON) 0V OUTPUT 10% VDD Supertex inc Power Dissipation (pulsed) O † A (A) (W) -86 -0.6 0. 25°C unless otherwise speciﬁed) ...

Page 3

... Typical Performance Curves Supertex inc. ° ° ° ° ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 ° ● Tel: 408-222-8888 ● www.supertex.com TP2535 ° ...

Page 4

... 25V DS -1.6 -1.2 -0.8 -0 (volts) GS Capacitance vs. Drain-to-Source Voltage 200 f = 1MHz 150 100 50 C RSS 0 0 -10 -20 V (volts) DS Supertex inc. (cont.) 100 150 -6 -8 -10 C ISS -30 -40 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Drain Current 100 V = -4. -10V -0.4 -0.8 -1.2 -1 ...

Page 5

... This dimension is not speciﬁed in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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