TP2540N3-G Supertex, TP2540N3-G Datasheet - Page 4

• Manufacturer Part Number: TP2540N3-G
• Description: MOSFET Small Signal 400V 25Ohm
• Manufacturer: Supertex

Specifications of TP2540N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.086 A
• Power Dissipation: 740 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
200
150
100
-1.6
-1.2
-0.8
-0.4
1.1
1.0
0.9
Supertex inc.
50
-2
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
C
RSS
BV
V
DS
DSS
-2
Transfer Characteristics
-10
0
= - 25V
Variation with Temperature
f = 1MHz
V
V
-4
GS
DS
T
(volts)
j
-20
50
(volts)
° (
C)
●
-6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
-8
(cont.)
C
ISS
150
-40
-10
4
100
-10
80
60
40
20
1.2
1.1
1.0
0.9
0.8
-8
-6
-4
-2
0
0
-50
0
0
●
V
(th)
Tel: [phone]
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
V
and R
60pF
GS
-0.4
0.4
= -4.5V
0
DS
Q (nanocoulombs)
G
I
D
Variation with Temperature
V
-0.8
0.8
(amperes)
DS
R
T
DS(ON)
190 pF
j
= - 10V
50
° (
●
C)
V
-1.2
(th)
1.2
www.supertex.com
V
@ -10V, -0.1A
DS
V
@ -1mA
GS
= - 40V
100
= -10V
-1.6
1.6
-2.0
150
2.0
2.5
2.0
1.5
1.0
0.5
0
TP2535