TP2510N8 Supertex, TP2510N8 Datasheet
TP2510N8
Manufacturer Part Number
TP2510N8
Description
Manufacturer
Supertex
Datasheets
1.TP2510.pdf
(5 pages)
2.TP2510N8.pdf
(4 pages)
3.TP2510N8.pdf
(4 pages)
4.TP2510N8.pdf
(4 pages)
Specifications of TP2510N8
Case
SOT-89
Date_code
07+
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TP2510N8
Manufacturer:
SUPERTEX
Quantity:
20 000
Company:
Part Number:
TP2510N8-G
Manufacturer:
MICROCHIP
Quantity:
12 000
Features
►
►
►
►
►
►
►
►
Applications
►
►
►
►
►
►
►
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available.
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
* Distance of 1.6 mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
TP2510
Device
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TO-243AA (SOT-89)
TP2510N8-G
Package Options
P-Channel Enhancement Mode
Vertical DMOS FETs
TP2510ND
-55°C to +150°C
Die*
300°C
Value
BV
BV
±20V
DGS
DSS
BV
General Description
This low threshold enhancement-mode (normally-off) tran-
sistor utilizes a vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coeffi cient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
DSS
Pin Confi guration
Product Marking
-100
(V)
/BV
DGS
TP5AW
TO-243AA (SOT-89) (N8)
TO-243AA (SOT-89) (N8)
R
3.5
DS(ON)
(Ω)
DRAIN
W = Code for Week Sealed
GATE
= “Green” Packaging
DRAIN
V
(max)
-2.4
GS(TH)
(V)
SOURCE
TP2510
I
(min)
-1.5
D(ON)
(A)
Related parts for TP2510N8
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
P-channel Enhancement Mode Vertical Dmos Fets
Manufacturer:
Supertex, Inc.
Datasheet:
Part Number:
Description:
32-channel Serial To Parallel Converter With High Voltage Push-pull Outputs - Supertex, Inc
Manufacturer:
Supertex, Inc.
Datasheet:
