TN2106K1 Supertex, TN2106K1 Datasheet
TN2106K1
Manufacturer Part Number
TN2106K1
Description
Manufacturer
Supertex
Datasheets
1.TN2106K1.pdf
(6 pages)
2.TN2106K1.pdf
(4 pages)
3.TN2106K1.pdf
(4 pages)
4.TN2106K1.pdf
(4 pages)
Specifications of TN2106K1
Date_code
05+
Packing_info
SOT-23
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TN2106K1
Manufacturer:
SUPERTEX
Quantity:
20 000
Part Number:
TN2106K1-G
Manufacturer:
SUPERTEX
Quantity:
20 000
Features
►
►
►
►
►
►
►
►
Applications
►
►
►
►
►
►
►
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source
Drain-to-gate
Gate-to-source
Operating and storage temperature
Soldering temperature*
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo-voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TN2106
Device
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-channel devices
ISS
and fast switching speeds
TO-236AB (SOT-23)
TN2106K1-G
Package Option
N-Channel Enhancement-Mode
Vertical DMOS FET
-55
O
C to +150
300
TN2106N3-G
Value
BV
BV
±20V
DGS
DSS
O
O
TO-92
C
C
Pin Confi gurations
Product Marking
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coeffi cient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
TO-236AB (SOT-23) (K1)
DRAIN
BV
N1LW
Y Y W W
GATE
DSS
2106
60
(V)
/BV
TO-236AB (SOT-23) (K1)
TN
SOURCE
DGS
W = Code for week sealed
YY = Year Sealed
WW = Week Sealed
TO-92 (N3)
= “Green” Packaging
= “Green” Packaging
R
(max)
DS(ON)
2.5
(Ω)
DRAIN
TO-92 (N3)
TN2106
SOURCE
V
(max)
GATE
2.0
GS(th)
(V)
Related parts for TN2106K1
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
N-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer:
Supertex Inc
Datasheet:
Part Number:
Description:
32-channel Serial To Parallel Converter With High Voltage Push-pull Outputs - Supertex, Inc
Manufacturer:
Supertex, Inc.
Datasheet:
