VN0104N3-P013-G Supertex, VN0104N3-P013-G Datasheet

VN0104N3-P013-G

Manufacturer Part Number

VN0104N3-P013-G

Description

MOSFET 40V 3Ohm

Manufacturer

Supertex

Datasheet

1.VN0104N3-P014-G.pdf (5 pages)

Specifications of VN0104N3-P013-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

350 mA

Resistance Drain-source Rds (on)

3 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

2000

Typical Turn-off Delay Time

6 ns

Current page: 1 of 5
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Features

►

Applications

►

For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Specification VF15 for layout and dimensions.

Product Summary

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Supertex inc.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

VN0104

Device

DSS

(V)

/BV

ISS

Supertex inc.

DGS

and fast switching speeds

Package Option

VN0104N3-G

TO-92

(max)

3.0

DS(ON)

(Ω)

N-Channel Enhancement-Mode

Vertical DMOS FET

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55

C to +150

(min)

(Die in wafer form)

D(ON)

2.0

(A)

VN1504NW

Value

±20V

DGS

DSS

General Description

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven, silicon-

gate manufacturing process. This combination produces a

device with the power handling capabilities of bipolar transistors

and the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Pin Configuration

Product Marking

Package may or may not include the following marks: Si or

Wafer / Die Options

(Die on adhesive tape)

Y Y W W

0 1 0 4

Si VN

Tel: 408-222-8888

VN1504NJ

SOURCE

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

= “Green” Packaging

www.supertex.com

DRAIN

GATE

(Die in waffle pack)

VN1504ND

VN0104

Related parts for VN0104N3-P013-G

VN0104N3-P013-G Summary of contents

Page 1

... Ordering Information Package Option Device TO-92 VN0104 VN0104N3-G For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’). Refer to Die Specification VF15 for layout and dimensions. Product Summary R BV ...

Page 2

... Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 10 (ON) t d(ON) VDD 10% OUTPUT 0V Supertex inc Power Dissipation D D † (pulsed) C (W) (mA) (A) 350 2.0 1 unless otherwise specified) ...

Page 3

... Output Characteristics 2.5 2.0 1.5 1.0 0 (volts) DS Transconductance vs. Drain Current 1 25V DS 0.8 0.6 0.4 0 0.2 0.4 0.6 I (amperes) D Maximum Rated Safe Operating Area 10 1.0 TO-92 (DC) 0 0.01 0.1 1.0 V (volts) DS Supertex inc 10V 2.5 GS 9.0V 8.0V 2.0 7.0V 1.5 6.0V 5.0V 1.0 4.0V 0 125 0.8 1.0 1.0 0.8 0.6 0.4 0 100 0.001 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 ...

Page 4

... 1.5 1.0 0 (volts) GS Capacitance vs. Drain-to-Source Voltage 100 (volts) DS Supertex inc. (cont.) 100 150 125 1.0MHz C ISS C RSS 30 40 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Drain Current 5 5. 10V GS 3 ...

Page 5

... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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