AT25DF321A-SH-T Atmel, AT25DF321A-SH-T Datasheet - Page 14

• Manufacturer Part Number: AT25DF321A-SH-T
• Description: IC FLASH 32MBIT 100MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT25DF321A-SH-T

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 32M (16384 pages x 256 Bytes)
• Speed: 100MHz
• Interface: SPI, RapidS
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Density: 32Mb
• Access Time (max): 5ns
• Interface Type: Serial (SPI)
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 4M
• Supply Current: 19mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8.4
14
Figure 8-5.
Chip Erase
The entire memory array can be erased in a single operation by using the Chip Erase command. Before a Chip Erase
command can be started, the Write Enable command must have been previously issued to the device to set the WEL bit
of the Status Register to a logical “1” state.
Two opcodes, 60h and C7h, can be used for the Chip Erase command. There is no difference in device functionality when
utilizing the two opcodes, so they can be used interchangeably. To perform a Chip Erase, one of the two opcodes (60h or
C7h) must be clocked into the device. Since the entire memory array is to be erased, no address bytes need to be
clocked into the device, and any data clocked in after the opcode will be ignored. When the CS pin is deasserted, the
device will erase the entire memory array. The erasing of the device is internally self-timed and should take place in a time
of t
The complete opcode must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted
on an even byte boundary (multiples of eight bits); otherwise, no erase will be performed. In addition, if any sector of the
memory array is in the protected or locked down state, then the Chip Erase command will not be executed, and the device
will return to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will be reset back to
the logical “0” state if the CS pin is deasserted on uneven byte boundaries or if a sector is in the protected or locked down
state.
While the device is executing a successful erase cycle, the Status Register can be read and will indicate that the device is
busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the t
determine if the device has finished erasing. At some point before the erase cycle completes, the WEL bit in the Status
Register will be reset back to the logical “0” state.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If an
erase error occurs, it will be indicated by the EPE bit in the Status Register.
Figure 8-6.
SCK
SCK
Atmel AT25DF321A
SO
SO
CS
CS
CHPE
SI
SI
.
Block Erase
Chip Erase
MSB
HIGH-IMPEDANCE
MSB
HIGH-IMPEDANCE
C
C
0
0
C
C
1
1
C
C
2
2
OPCODE
OPCODE
C
C
3
3
C
C
4
4
C
C
5
5
C
C
6
6
C
C
7
7
MSB
A
8
A
9
A
10 11
A
ADDRESS BITS A23-A0
A
12
A
A
26
A
27 28
A
A
29 30
A
A
31
3686D–DFLASH–12/09
CHPE
time to