AT25DF321A-SH-T Atmel, AT25DF321A-SH-T Datasheet - Page 2

• Manufacturer Part Number: AT25DF321A-SH-T
• Description: IC FLASH 32MBIT 100MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT25DF321A-SH-T

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 32M (16384 pages x 256 Bytes)
• Speed: 100MHz
• Interface: SPI, RapidS
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Density: 32Mb
• Access Time (max): 5ns
• Interface Type: Serial (SPI)
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 4M
• Supply Current: 19mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.
Description
®
The Atmel
AT25DF321A is a serial interface Flash memory device designed for use in a wide variety of high-volume
consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for
execution. The flexible erase architecture of the AT25DF321A, with its erase granularity as small as 4-Kbytes, makes it
ideal for data storage as well, eliminating the need for additional data storage EEPROM devices.
The physical sectoring and the erase block sizes of the AT25DF321A have been optimized to meet the needs of today's
code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can
be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in
their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase
Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and
data storage segments to be added while still maintaining the same overall device density.
The AT25DF321A also offers a sophisticated method for protecting individual sectors against erroneous or malicious
program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can
unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely
protected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or in
applications where data storage segments need to be modified without running the risk of errant modifications to the
program code segments. In addition to individual sector protection capabilities, the AT25DF321A incorporates Global
Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at once.
This reduces overhead during the manufacturing process since sectors do not have to be unprotected one-by-one prior to
initial programming.
To take code and data protection to the next level, the AT25DF321A incorporates a sector lockdown mechanism that
allows any combination of individual 64-Kbyte sectors to be locked down and become permanently read-only. This
addresses the need of certain secure applications that require portions of the Flash memory array to be permanently
protected against malicious attempts at altering program code, data modules, security information, or
encryption/decryption algorithms, keys, and routines. The device also contains a specialized OTP (One-Time
Programmable) Security Register that can be used for purposes such as unique device serialization, system-level
Electronic Serial Number (ESN) storage, locked key storage, etc.
Specifically designed for use in 3V systems, the AT25DF321A supports read, program, and erase operations with a supply
voltage range of 2.7V to 3.6V. No separate voltage is required for programming and erasing.
Atmel AT25DF321A
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3686D–DFLASH–12/09