BUK9608-55B /T3 NXP Semiconductors, BUK9608-55B /T3 Datasheet - Page 11
BUK9608-55B /T3
Manufacturer Part Number
BUK9608-55B /T3
Description
MOSFET HIGH PERF TRENCHMOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9608-55B_T3.pdf
(14 pages)
Specifications of BUK9608-55B /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
15 V
Continuous Drain Current
110 A
Resistance Drain-source Rds (on)
0.007 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
86 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
203 W
Rise Time
123 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
131 ns
Part # Aliases
BUK9608-55B,118
NXP Semiconductors
8. Revision history
Table 7.
BUK9608-55B
Product data sheet
Document ID
BUK9608-55B_4
Modifications:
BUK9608-55B_3
Revision history
Release date
20100504
20100429
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 04 — 4 May 2010
Change notice
-
-
N-channel TrenchMOS logic level FET
Supersedes
BUK9608-55B_3
BUK95_96_9E08_55B-02
BUK9608-55B
© NXP B.V. 2010. All rights reserved.
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