BS108ZL1 ON Semiconductor, BS108ZL1 Datasheet

BS108ZL1

Manufacturer Part Number

BS108ZL1

Description

MOSFET 200V 250mA Logic

Manufacturer

ON Semiconductor

Datasheet

1.BS108ZL1.pdf (3 pages)

Specifications of BS108ZL1

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

250 mA

Resistance Drain-source Rds (on)

8 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Forward Transconductance Gfs (max / Min)

0.33 S

Minimum Operating Temperature

- 55 C

Power Dissipation

0.35 W

Factory Pack Quantity

2000

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BS108ZL1G

Manufacturer:

Quantity:

3 900

Company:

H&T Electronics

Part Number:

BS108ZL1G

Quantity:

Current page: 1 of 3
Download datasheet (91Kb)

BS108

Small Signal MOSFET

250 mAmps, 200 Volts,

Logic Level

N−Channel TO−92

applications such as line drivers, relay drivers, CMOS logic,

microprocessor or TTL to high voltage interface and high voltage

display drivers.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The Power Dissipation of the package may result in a lower continuous drain

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

*For additional information on our Pb−Free strategy and soldering details, please

April, 2011 − Rev. 4

MAXIMUM RATINGS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Drain −Source Voltage

Gate−Source Voltage

Drain Current

Continuous (Note 1)

Pulsed (Note 2)

Total Power Dissipation

@ T

Derate above T

Operating and Storage Temperature Range

This MOSFET is designed for high voltage, high speed switching

many Devices

Low Drive Requirement, V

Inherent Current Sharing Capability Permits Easy Paralleling of

AEC Qualified

PPAP Capable

This is a Pb−Free Device*

current.

= 25°C

Rating

= 3.0 V max

Symbol

, T

DSS

stg

−55 to +150

Value

200

±20

250

500

350

6.4

mW/°C

mAdc

Unit

Vdc

°C

BS108ZL1G

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

BS108 = Device Code

http://onsemi.com

250 mAMPS

200 VOLTS

CASE 29−11

(Pb−Free)

DS(on)

Package

STYLE 30

= Assembly Location

= Year

= Work Week

= Pb−Free Package

TO−92

N−Channel

Publication Order Number:

= 8 W

2000/Ammo Pack

MARKING

DIAGRAM

Shipping

YWW G

BS108

BS108/D

Related parts for BS108ZL1

BS108ZL1 Summary of contents

Page 1

... DSS V ±20 Vdc GS mAdc I 250 D I 500 350 mW 6.4 mW/° −55 to +150 °C J stg BS108ZL1G 1 http://onsemi.com 250 mAMPS 200 VOLTS DS(on) N−Channel MARKING DIAGRAM A BS108 YWW G TO−92 G CASE 29− STYLE 30 3 BS108 = Device Code ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( mA Zero Gate Voltage Drain Current (V = 130 Vdc DSS GS Gate−Body Leakage Current ( Vdc ...

Page 3

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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