BS108ZL1 ON Semiconductor, BS108ZL1 Datasheet - Page 2

• Manufacturer Part Number: BS108ZL1
• Description: MOSFET 200V 250mA Logic
• Manufacturer: ON Semiconductor

Specifications of BS108ZL1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 250 mA
• Resistance Drain-source Rds (on): 8 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Forward Transconductance Gfs (max / Min): 0.33 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.35 W
• Factory Pack Quantity: 2000

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
PULSE GENERATOR
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage
Static Drain−to−Source On−Resistance
Drain Cutoff Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Time (See Figure 1)
Turn−Off Time (See Figure 1)
50
(V
(V
(V
(I
(V
(V
(V
(I
(V
(V
(V
D
D
GS
DSS
GS
GS
GS
GS
DS
DS
DS
= 1.0 mA, V
= 120 mA, V
Figure 1. Switching Test Circuit
= 0.2 V, V
= 25 V, V
= 25 V, V
= 25 V, V
= 0, I
= 15 Vdc, V
= 2.0 Vdc, I
= 2.8 Vdc, I
= 130 Vdc, V
D
= 10 mA)
V
GS
GS
GS
DS
DS
in
DS
50
40 pF
D
D
DS
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= V
= 70 V)
= 20 V)
= 50 mA)
= 100 mA)
GS
= 0)
Characteristic
GS
= 0)
1.0 M
)
+25 V
23
(T
C
= 25°C unless otherwise noted)
50 W ATTENUATOR
20 dB
RESISTIVE SWITCHING
http://onsemi.com
2
TO SAMPLING SCOPE
50 W INPUT
OUTPUT
INVERTED
INPUT
V
out
Symbol
V
V
r
I
(BR)DS
DS(on)
t
t
C
I
GSSF
I
C
GS(th)
C
g
d(on)
d(off)
DSS
DSX
FS
oss
rss
iss
V
Figure 2. Switching Waveforms
in
V
10 V
out
Min
200
10%
0.5
t
−
−
−
−
−
−
−
−
−
−
−
on
50%
90%
0.33
Typ
PULSE
WIDTH
−
−
−
−
−
−
−
−
−
−
−
−
90%
Max
150
1.5
8.0
30
10
10
25
30
10
15
15
−
−
−
50%
t
10%
off
90%
Mhos
nAdc
nAdc
Unit
Vdc
Vdc
mA
pF
pF
pF
ns
ns
W