BUK9606-75B /T3 NXP Semiconductors, BUK9606-75B /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK9606-75B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-75B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 116 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 144 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 273 ns
• Part # Aliases: BUK9606-75B,118

NXP Semiconductors
BUK9606-75B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
I
D
100
80
60
40
20
12
10
0
8
6
4
0.0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
V
GS
0.5
= 3 V
100
1.0
3.2
T
j
= 175 °C
1.5
3.4
3.6
200
2.0
3.8
4
All information provided in this document is subject to legal disclaimers.
I
T
2.5
D
j
5
V
= 25 °C
(A)
GS
03ng82
03ng85
10
(V)
300
3.0
Rev. 4 — 20 July 2011
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
2.0
1.5
1.0
0.5
2.4
1.6
0.8
0
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9606-75B
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
(°C)
(°C)
03ng52
03nb25
180
180
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