BUK9606-55A NXP Semiconductors, BUK9606-55A Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9606-55A

Manufacturer Part Number
BUK9606-55A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK9606-55A
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BUK9606-55A
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NXP
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60 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
BUK9606-55A
N-channel TrenchMOS logic level FET
Rev. 04 — 31 May 2010
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Product data sheet

Related parts for BUK9606-55A

BUK9606-55A Summary of contents

Page 1

... BUK9606-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 May 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET Min ≤ 175 ° [ ° Figure 1 ...

Page 3

... ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET Min Typ Max - - - [ 154 [2] ...

Page 4

... V /I DSon δ All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03nf02 = 10 μs ...

Page 5

... BUK9606-55A Product data sheet Conditions see Figure 4 mounted on a printed-circuit board ; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET Min Typ - - - 50 03nf03 t p δ ...

Page 6

... see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET Min Typ Max 1 2.3 0 ...

Page 7

... V DS (V) Fig 6. 03aa36 g (S) max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET Drain-source on-state resistance as a function of gate-source voltage; typical values 140 fs 120 ...

Page 8

... Fig 10. Gate-source voltage as a function of gate 03aa33 R DSon (mΩ) 120 180 ( ° Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET Coss Crss 0 −2 − function of drain-source voltage; typical values 03ne94 = 25 ° 0.8 1.0 ...

Page 10

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. SOT404 ...

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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9606-55A separated from data sheet BUK9506_9606_9E06_55A-03. 20010723 Product data sheet - All information provided in this document is subject to legal disclaimers. ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 31 May 2010 BUK9606-55A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 31 May 2010 Document identifier: BUK9606-55A ...

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