BUK9606-55A NXP Semiconductors, BUK9606-55A Datasheet - Page 4

• Manufacturer Part Number: BUK9606-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9606-55A
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
200
150
100
50
0
function of mounting base temperature
25
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Capped at 75 A due to package
50
(A)
I
75
D
10
10
10
1
3
2
1
capped at 75 A due to package
100
P
t
p
125
T
δ =
150
R
DSon
t
T
t
p
All information provided in this document is subject to legal disclaimers.
175
T
= V
mb
03ne93
DS
(°C)
200
/I
D
Rev. 04 — 31 May 2010
10
Fig 2.
D.C.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
V
DS
N-channel TrenchMOS logic level FET
(V)
50
t
100 μs
100 ms
1 ms
10 ms
p
BUK9606-55A
= 10 μs
100
03nf02
10
2
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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