BUK9606-55A NXP Semiconductors, BUK9606-55A Datasheet - Page 8

• Manufacturer Part Number: BUK9606-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9606-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
I
GS(th)
(V)
D
100
2.5
1.5
0.5
80
60
40
20
0
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0.5
0
1.0
T
j
= 175 °C
1.5
60
max
typ
min
2.0
T
2.5
j
= 25 °C
120
V
All information provided in this document is subject to legal disclaimers.
GS
03aa33
T
3.0
j
( ° C)
03ne97
(V)
180
3.5
Rev. 04 — 31 May 2010
Fig 10. Gate-source voltage as a function of gate
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
DSon
(V)
GS
5
4
3
2
1
0
8
7
6
5
4
charge; typical values
of drain current; typical values
0
0
20
N-channel TrenchMOS logic level FET
20
V
V
GS
DD
40
(V) = 3
= 14 V
40
3.2
3.4
3.6
4
5
BUK9606-55A
60
60
80
V
DD
Q
© NXP B.V. 2010. All rights reserved.
80
G
= 44 V
100
(nC)
I
D
03ne95
03nf00
(A)
120
100
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