ALD1109EPAL Advanced Linear Devices, ALD1109EPAL Datasheet - Page 5

• Manufacturer Part Number: ALD1109EPAL
• Description: MOSFET Dual N-Ch Pair Array
• Manufacturer: Advanced Linear Devices

Specifications of ALD1109EPAL

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Resistance Drain-source Rds (on): 500 Ohms
• Mounting Style: Through Hole
• Package / Case: PDIP-8
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Power Dissipation: 500 mW
• Factory Pack Quantity: 50

ALD110800/ALD110800A/ALD110900/ALD110900A
100000
15
10
20
10000
5
0
1000
100
0.01
FORWARD TRANSFER CHARACTERISTICS
10
0.1
-4
5
4
2
3
0
1
1
-4
0
SUBTHRESHOLD FORWARD TRANSFER
V
T
T
V GS(TH) =-3.5V
-2
A
DS
A
= +25°C
= 25°C
V GS(TH) = +0.2V
= +10V
OUTPUT CHARACTERISTICS
-3
DRAIN-SOURCE ON VOLTAGE (V)
GATE-SOURCE VOLTAGE (V)
V DS =+0.1V
T A = +25°C
V GS(TH) =-1.3V
2
0
GATE-SOURCE VOLTAGE (V)
V GS(TH) = 0.0V
CHARACTERISTICS
-2
2
V GS(TH) = -0.4V
4
V GS(TH) =+0.2V
-1
4
V GS(TH) = -1.3V
V GS(TH) =0.0V
TYPICAL PERFORMANCE CHARACTERISTICS
6
V GS(TH) = +0.8V
V GS(TH) = -3.5V
6
0
V GS(TH) = +1.4V
V GS -V GS(TH) =+3V
V GS -V GS(TH) =+2V
V GS -V GS(TH) =+5V
V GS -V GS(TH) =+4V
V GS -V GS(TH) =+1V
V GS(TH) =+0.8V
8
8
1
10
2
10
Advanced Linear Devices
2500
2000
1500
1000
500
1000
2.5
2.0
1.5
1.0
0.01
0.5
100
0
0.1
0
10
10
1
V
-50
-0.5
T A = 25°C
GS(th)
SUBTHRESHOLD FORWARD TRANSFER
DRAIN-SOURCE ON RESISTANCE
vs. DRAIN-SOURCE ON CURRENT
V
Slope = 110mV/decade
DS
-25
DRAIN-SOURCE ON CURRENT (µA)
=0.1V
V
TRANSCONDUCTANCE vs.
-0.4
GS(th)
AMBIENT TEMPERATURE
~
AMBIENT TEMPERATURE (°C)
GATE-SOURCE VOLTAGE (V)
CHARACTERISTICS
0
100
V
GS(th)
-0.3
25
V GS = V GS(TH) +4V
V
50
-0.2
GS(th)
V GS = V GS(TH) +6V
1000
75
V
-0.1
GS(th)
100
10000
V
GS(th)
125
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