NE25139-T1-U72 NEC/CEL, NE25139-T1-U72 Datasheet

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NE25139-T1-U72

Manufacturer Part Number
NE25139-T1-U72
Description
MOSFET REORD 551-NE25139 SOT-143 DL GT MOSFET
Manufacturer
NEC/CEL
Datasheet
1.NE25139-T1-U72.pdf (6 pages)

Specifications of NE25139-T1-U72

Factory Pack Quantity
3000

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
NE25139-T1-U72
Manufacturer:
NEC
Quantity:
20 000
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER AND
• LOW CRSS: 0.02 pF (TYP)
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• L
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
DESCRIPTION
The NE253 is an 800 m dual gate GaAs FET designed to
provide flexibility in its application as a mixer, AGC amplifier,
or low noise amplifier. As an example, by shorting the second
gate to the source, higher gain can be realized than with single
gate MESFETs. This device is available in a mini-mold (sur-
face mount) package.
ELECTRICAL CHARACTERISTICS
MIXER IN UHF APPLICATIONS
SYMBOL
V
V
G1
G1S (OFF)
G2S (OFF)
BV
I
I
C
|Y
C
I
G
G1SS
G2SS
NF
DSS
RSS
ISS
= 1.0 m, L
PS
DSX
FS
|
G2
Noise Figure at V
f = 900 MHz
Power Gain at V
f = 900 MHz
Drain to Source Breakdown Voltage at V
V
Saturated Drain Current at V
Gate 1 to Source Cutoff Voltage at V
V
Gate 2 to Source Cutoff Voltage at V
V
Gate 1 Reverse Current at V
Gate 2 Reverse Current at V
Forward Transfer Admittance at V
I
Input Capacitance at V
f = 1 MHz
Reverse Transfer Capacitance at V
I
DS
DS
G2S
G2S
G1S
= 1.5 m, W
= 10 mA, f = 1.0 kHz
= 10 mA, f = 1 MHz
= 0 V, I
= 0, I
= 0 V, I
PARAMETERS AND CONDITIONS
DS
D
D
= 20 A
= 100 A
= 100 A
G
DS
PACKAGE OUTLINE
DS
= 800 m
= 5 V, V
PART NUMBER
= 5 V, V
DUAL-GATE GaAs MESFET
DS
= 5 V, V
G2S
G2S
DS
DS
DS
= 1 V, I
= 0, V
= 0. V
= 5 V, V
= 1 V, I
DS
G2S
(T
DS
GENERAL PURPOSE
A
DS
DS
= 5 V, V
G1S
G2S
= 1 V, I
= 25 C)
= 5 V, V
DS
D
= 5 V,
= 5 V,
G2S
G1S
= -4V, V
= -4V, V
= 10 mA,
= 10 mA,
= 0 V, V
G2S
= -4 V,
D
G2S
= 10 mA,
= 1 V,
G2S
G1S
= 1 V,
G1S
= 0
= 0
= 0 V
20
10
0
0
California Eastern Laboratories
POWER GAIN AND NOISE FIGURE vs.
V
GS
Drain to Source Voltage, V
DRAIN TO SOURCE VOLTAGE
UNITS
mA
mS
dB
dB
pF
pF
= 1 V, I
V
V
V
A
A
DS
= 10 mA, f = 900 MHz
MIN
1.0
5
16
10
10
25
NE25339
NE25339
G
DS
PS
NF
TYP
0.02
1.1
1.5
39
20
40
35
(V)
10
0
10
5
0.035
MAX
-3.5
-3.5
2.5
2.0
80
10
10

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NE25139-T1-U72 Summary of contents

Page 1

FEATURES • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW CRSS: 0.02 pF (TYP) • HIGH GPS (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DSX V Gate 1 to Source Voltage G1S V Gate 2 to Source Voltage G2S I Drain Current D T Channel Temperature CH T Storage Temperature STG P Total Power ...

Page 3

TYPICAL PERFORMANCE CURVES INPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE 2 G1S G1S D 1 ...

Page 4

NONLINEAR MODEL UNITS FOR MODEL PARAMETERS Parameter time capacitance inductance resistance voltage current FET NONLINEAR MODEL PARAMETERS Parameters FET1 UGW 100e-6 NGF 4 IS 8.78e- RIS 0 RID 0 TAU 1.0e-12 CDSO ...

Page 5

SCHEMATIC PORT P1 port = 3 CAP CpkgG1G2 C = 0.21 PORT Pgate1 port = 1 CAP CpkgG1S C = 0.15 UNITS Parameter capacitance inductance resistance NOTES: 1. This UGW value scales the model parameters on page 1. 2. This ...

Page 6

OUTLINE DIMENSIONS (Units in mm) OUTLINE 39 (SOT-143) +0.2 2.8 -0.3 +0.2 1.5 -0.1 2 2.9 0.2 0.95 0.85 1 +0.10 0.6 -0.05 +0.2 1.1 0.8 -0.1 1. Source 2. Drain 3. Gate 2 5˚ 4. Gate ...

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