NE429M01-T1 NEC/CEL, NE429M01-T1 Datasheet

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NE429M01-T1

Manufacturer Part Number
NE429M01-T1
Description
MOSFET Super Lo Noise HJFET
Manufacturer
NEC/CEL
Datasheet
1.NE434S01-T1B.pdf (10 pages)

Specifications of NE429M01-T1

Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
2 V
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Mounting Style
SMD/SMT
Package / Case
Mini-6
Forward Transconductance Gfs (max / Min)
0.06 S
Power Dissipation
125 mW
Factory Pack Quantity
3000

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE429M01-T1
Manufacturer:
VISHAY
Quantity:
9 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
NE429M01-T1
Manufacturer:
NEC
Quantity:
20 000
FEATURES
• HIGH DYNAMIC RANGE
• LOW IM DISTORTION: -40 dBc
• HIGH OUTPUT POWER : 27.5 dBm at TYP
• LOW NOISE: 1.5 dB TYP at 500 MHz
• LOW COST
DESCRIPTION
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed: PW
3. RS = RL = 50
The NE461 series of NPN silicon epitaxial bipolar transis-
tors is designed for medium power applications requiring high
dynamic range. This device exhibits an outstanding combina-
tion of high gain and low intermodulation distortion, as well as
low noise figure. The NE461 series offers excellent perfor-
mance and reliability at low cost through titanium,
platinum, gold metallization system and direct nitride passiva-
tion of the surface of the chip. Devices are available in a low
cost surface mount package (SOT-89) as well as in chip form.
ELECTRICAL CHARACTERISTICS
S
Y
R
R
|S
NF
M
TH (J-C)
TH (J-A)
P
I
I
h
IM
CBO
EBO
G
21E
f
1dB
B
FE
T
MIN
L
O
3
|
2
L
NPN MEDIUM POWER MICROWAVE TRANSISTOR
S
Gain Bandwidth Product at V
Minimum Noise Figure
Linear Gain, V
n I
DC Current Gain
Collector Cutoff Current at V
Emitter Cutoff Current at V
Output Power at 1 dB Compression, V
Intermodulation Distortion, 10 V, 100 mA, F1 = 1.0 GHz, F2 = 0.99 GHz,
Total P
Thermal Resistance (Junction to Case)
Thermal Resistance (Junction to Ambient)
350 ms, Duty Cycle
s
e
untuned
t r
o i
OUT
n
P
o
=
w
V
2
r e
CE
CE
0
G
d
2
= 12.5 V, I
= 12.5 V, I
B
a
P
at V
m
n i
A
EIAJ
R
t a
CE
3
2%
A
at V
V
M
1
= 10 V, I
1
P
0
CE
E
EB
R
A
C
C
, V
P
T
CE
CB
E
C
CE
= 10 V, I
=
A
E
=
= 2 V, I
G
K
5
R
R
= 10 V, I
1
= 20 V, I
1
S I
A
= 10 V, I
0
0
S
T
0
G
0
m
C
T
0
N
A
E
E
m
A
=
V
m
U
N
C
R
O
f ,
CE
, A
C
5
, A
M
D
CE
(T
E
= 0 mA
0
U
=
C
=
E
B
D
C
1
= 12.5 V, I
C
A
2
T
m
= 0 mA .
= 12.5 V, I
E
= 50 mA, 500 MHz
5
0 .
1
O
0 .
N
L
=
= 25 C)
0
A
0 .
R
N I
N
U
G
1
G
m
I D
M
0
G
H
E
H
, A
0
H
z
B
I T
z
m
z
E
1
O
R
A
G
C
N
C
H
S
=
= 100 mA, 2.0 GHz
z
1
0
0
m
NE46100 / NE46134
, A
1
0 .
G
H
z
30.0
28.0
26.0
24.0
22.0
20.0
18.0
16.0
14.0
12.0
5
U
G
dBm
d
d
N
C/W
/ C
dB
d
d
d
d
B
B
H
T I
B
B
B
B
A
A
m
W
TYPICAL OUTPUT POWER
c
z
S
f = 1.0 GHz, I
10
Input Power, P
vs. INPUT POWER
M
4 -
27.0
4
N I
0
0
0 .
NE46134
N
0
E
0
T
1
15
Y
4
5
1.5
2
9
(
0
C
C
6
5 .
0 .
0 .
P
0 .
1
I H
= 100 mA
0
IN
0
M
) P
2
(dBm)
5.0
5.0
A
30
0
X
0
20
M
4 -
12.5 V
5
4
N I
0
5 .
0
0 .
10 V
N
2
5 V
S
3
E
T
2
5
1.5
2
8
7
1
C
3
4
7
Y
25
5 .
0 .
0 .
0 .
2
4
6
4
5 .
P
5 .
1
5
3
3
4
6
M
32.5
2
5.0
5.0
A
0
0
X

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NE429M01-T1 Summary of contents

Page 1

NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST DESCRIPTION The NE461 ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C P Total Power Dissipation T 2 NE46100 3 NE46134 T Junction Temperature J ...

Page 3

TYPICAL PERFORMANCE CURVES NE46100, NE46134 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0.5 0 Collector Current, I (mA) C NE46134 TYPICAL OUTPUT POWER/INTERMODULATION DISTORTION vs. INPUT POWER f = 1.0 ...

Page 4

NE46100, NE46134 TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 GHz j10 GHz -j10 GHz .1 GHz -j25 -j50 NE46100 ...

Page 5

TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 GHz j10 GHz -j10 .1 GHz .1 GHz -j25 -j50 NE46100 FREQUENCY S 11 ...

Page 6

TYPICAL COMMON EMITTER SCATTERING PARAMETERS NE46100 100 FREQUENCY S 11 (MHz) MAG ANG 100 0.791 -139 200 0.809 -161 500 0.822 -177 800 0.815 176 1000 0.819 173 1200 0.818 170 ...

Page 7

TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j10 2.5 GHz 2.5 GHz -j10 S 11 .05 GHz .05 GHz -j25 -j50 NE46134 FREQUENCY S 11 (GHz) MAG ...

Page 8

TYPICAL COMMON EMITTER SCATTERING PARAMETERS NE46134 100 FREQUENCY S 11 (GHz) MAG ANG 0.05 0.366 -103.2 0.10 0.374 -141.4 0.20 0.361 -168.7 0.40 0.358 169.1 0.60 0.363 154.2 0.80 0.368 141.6 ...

Page 9

TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j10 S 11 2.5 GHz 2.5 GHz -j10 S 11 .05 GHz .05 GHz -j25 -j50 NE46134 FREQUENCY S 11 ...

Page 10

OUTLINE DIMENSIONS 46100 (CHIP) (Units in m) 550 240 Thickness: 160 m ORDERING INFORMATION PART NUMBER QUANTITY NE46100 100 NE46134-T1 1000 115 450 85 190 PACKAGING Waffle Pack Tape & Reel PACKAGE OUTLINE 34 (SOT-89) (Units ...

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