NE429M01-T1 NEC/CEL, NE429M01-T1 Datasheet - Page 10

• Manufacturer Part Number: NE429M01-T1
• Description: MOSFET Super Lo Noise HJFET
• Manufacturer: NEC/CEL

Specifications of NE429M01-T1

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 2 V
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Mounting Style: SMD/SMT
• Package / Case: Mini-6
• Forward Transconductance Gfs (max / Min): 0.06 S
• Power Dissipation: 125 mW
• Factory Pack Quantity: 3000

OUTLINE DIMENSIONS
ORDERING INFORMATION
NE46100
NE46134-T1
PART NUMBER
Thickness: 160 m
550
46100 (CHIP)
(Units in m)
65
QUANTITY
65
1000
100
E
B
240
PACKAGING
Tape & Reel
Waffle Pack
115
85
190
450
0.42 0.06
0.42 0.06
0.47 0.06
0.41
E
C
B
1.5
1.5
+0.03
-
0.05
PACKAGE OUTLINE 34
B
C
E
Part Number Identifier
0.8 MIN
BOTTOM VIEW
(Units in mm)
Lot Number Identifier
(SOT-89)
TOP VIEW
4.0 0.25
3
1
2
2.5 0.1
X X
Q X
1.6 0.2
1.5 0.1
07/30/2003
4.5 0.1