TP0610KL-TR1 Vishay/Siliconix, TP0610KL-TR1 Datasheet - Page 3

• Manufacturer Part Number: TP0610KL-TR1
• Description: MOSFET 60V 0.27A 0.8W 10ohm @ 4.5V
• Manufacturer: Vishay/Siliconix

Specifications of TP0610KL-TR1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 0.27 A
• Resistance Drain-source Rds (on): 6 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Fall Time: 15.5 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.8 W
• Rise Time: 15.5 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 21 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
1.0
0.8
0.6
0.4
0.2
0.0
20
16
12
15
12
8
4
0
9
6
3
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
0.3
= 500 mA
200
1
V
DS
Output Characteristics
Q
g
I
- Drain-to-Source Voltage (V)
D
0.6
- Total Gate Charge (nC)
V
- Drain Current (mA)
GS
Gate Charge
8 V
V
400
GS
2
V
= 4.5 V
DS
V
= 5 V
GS
= 30 V
0.9
= 10 V
600
3
V
GS
1.2
= 10 V
V
800
DS
4
1.5
= 48 V
5 V
4 V
7 V
6 V
1000
1.8
5
1200
900
600
300
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
0
8
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
GS
2
V
5
V
V
GS
Transfer Characteristics
GS
T
0
DS
= 10 V at 500 mA
J
= 0 V
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Capacitance
25
10
4
T
J
50
Vishay Siliconix
= - 55 °C
V
GS
C
15
C
C
6
oss
75
iss
rss
= 4.5 V at 25 mA
TP0610K
125 °C
www.vishay.com
100
20
25 °C
8
125
150
10
25
3