TN0110N3-P013 Supertex, TN0110N3-P013 Datasheet - Page 3
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TN0110N3-P013
Manufacturer Part Number
TN0110N3-P013
Description
MOSFET 100V 3Ohm
Manufacturer
Supertex
Datasheet
1.TN0110N3-P002-G.pdf
(5 pages)
Specifications of TN0110N3-P013
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Resistance Drain-source Rds (on)
3 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
6 ns
Typical Performance Curves
Supertex inc.
0.01
0.5
0.4
0.3
0.2
0.1
5.0
4.0
3.0
2.0
1.0
1.0
0.1
10
0
0
1.0
0
0
TO-92 (pulsed)
TO-92 (DC)
Maximum Rated Safe Operating Area
Transconductance vs. Drain Current
T
C
= 25
10
0.6
O
C
Output Characteristics
10
20
I
1.2
D
V
(amperes)
V
DS
DS
(volts)
(volts)
1.8
30
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
T
T
T
V
V
A
A
A
40
DS
2.4
GS
= -55
= 25
= 150
6V
= 25V
8V
4V
2V
= 10V
O
O
C
O
C
C
1000
50
3.0
3
2.0
1.0
5.0
4.0
3.0
2.0
1.0
1.0
0.8
0.6
0.4
0.2
0
0
0
0.001
0
Power Dissipation vs. Case Temperature
0
TO-92
Thermal Response Characteristics
Tel: 408-222-8888
25
Saturation Characteristics
2.0
0.01
50
4.0
t
p
V
(seconds)
DS
T
C
(volts)
75
(
0.1
O
C)
6.0
www.supertex.com
100
T
V
C
P
GS
= 25
D
TO-92
= 1W
1.0
= 10V
8.0
O
125
C
2V
8V
6V
4V
150
10
10
TN0110