TN2540N3-P014 Supertex, TN2540N3-P014 Datasheet - Page 2

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TN2540N3-P014

Manufacturer Part Number
TN2540N3-P014
Description
MOSFET 400V 12Ohm
Manufacturer
Supertex
Datasheet

Specifications of TN2540N3-P014

Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
175 mA
Resistance Drain-source Rds (on)
12 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
25 ns
Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
† I
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
ΔV
R
BV
V
1.
2.
Sym
t
I
C
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
TO-243AA (SOT-89)
d(ON)
GS(th)
GSS
D
DSS
DS(ON)
t
OSS
RSS
t
GS(th)
t
ISS
SD
rr
DSS
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
Package
TO-92
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
OUTPUT
INPUT
V
10V
0V
DD
0V
GS(th)
DS(ON)
10%
with temperature
with temperature
t
d(ON)
(continuous)
10%
t
(ON)
90%
(mA)
175
260
j
I
t
1235 Bordeaux Drive, Sunnyvale, CA 94089
.
r
D
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
O
90%
t
d(OFF)
C unless otherwise specified)
t
(OFF)
(pulsed)
2.0
1.8
(A)
I
D
t
90%
F
10%
Power Dissipation
2
0.75
Min
400
125
0.6
0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
0.74
A
1.6
(W)
= 25
-2.5
200
300
GENERATOR
Typ
0.5
1.0
8.0
8.0
95
20
10
-
-
-
-
-
-
-
-
-
-
-
O
PULSE
C
Tel: 408-222-8888
INPUT
R
GEN
0.75
Max
-4.0
100
125
2.0
1.0
1.8
10
12
12
70
25
20
15
25
20
-
-
-
-
-
(
O
mV/
mmho V
125
Units
%/
C/W)
θ
15
mA
nA
µA
pF
jc
ns
ns
Ω
V
V
A
V
O
O
C
C V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
www.supertex.com
D
(
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
O
GEN
170
78
= 1.0A,
C/W)
θ
ja
= 0.8 Max Rating,
= 25V, I
= 25V,
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0V, T
= 4.5V, V
= 10V, V
= 4.5V, I
= 10V, I
= 10V, I
= 0V,
= 25V,
= 0V, I
= 0V, I
V
= 25Ω
DD
R
DS
DS
L
D.U.T.
, I
, I
OUTPUT
D
SD
SD
A
D
D
DS
D
D
D
(mA)
= 100µA
175
260
= 1.0mA
= 1.0mA
D
I
= 125°C
DS
= 200mA
= 1.0A
DR
DS
= 100mA
= 500mA
= 500mA
= Max Rating
= 150mA
DS
= 25V
= 25V
= 0V
TN2540
I
2.0
1.8
(A)
DRM

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