VN2450N3-P003 Supertex, VN2450N3-P003 Datasheet - Page 4
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VN2450N3-P003
Manufacturer Part Number
VN2450N3-P003
Description
MOSFET 500V 13Ohm
Manufacturer
Supertex
Datasheet
1.VN2450N3-P002-G.pdf
(6 pages)
Specifications of VN2450N3-P003
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Resistance Drain-source Rds (on)
13 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
25 ns
Typical Performance Curves
300
225
150
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.1
1.0
0.9
0.8
75
-50
0
0
0
Capacitance vs. Drain-to-Source Voltage
V DS = 25V
C RSS
BV
1
DSS
Transfer Characteristics
10
0
Variation with Temperature
C OSS
C ISS
2
V
DS
T
V
T A = 25
J
GS (volts)
(volts)
20
50
(
O
3
C)
●
O
T A = -55
C
1235 Bordeaux Drive, Sunnyvale, CA 94089
f = 1MHz
4
100
30
T A = 125
O
C
(cont.)
5
O
C
150
40
6
4
1.35
1.05
0.75
10
1.5
1.2
0.9
0.6
30
25
20
15
10
8
6
4
2
0
5
0
-50
0
0
V
●
I D = 0.5A
V GS(th) @ 1mA
(th)
Gate Drive Dynamic Characteristics
-25
On-Resistance vs. Drain Current
Tel: 408-222-8888
and R
0.3
1.0
0
DS
Q
G
Variation with Temperature
25
(nanocoulombs)
I
0.6
D
(amperes)
T
VGS = 4.5V
V DS =10V
J
2.0
50
(
O
R DS(on) @ 10V, 0.4A
C)
●
0.9
75
www.supertex.com
V DS =40V
100
3.0
VGS = 10V
1.2
125
150
4.0
1.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VN2450