TP0606N3-P002 Supertex, TP0606N3-P002 Datasheet - Page 4
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TP0606N3-P002
Manufacturer Part Number
TP0606N3-P002
Description
MOSFET 60V 3.5Ohm
Manufacturer
Supertex
Datasheet
1.TP0606N3-P002-G.pdf
(5 pages)
Specifications of TP0606N3-P002
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.32 A
Resistance Drain-source Rds (on)
3.5 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
20 ns
Typical Performance Curves
Supertex inc.
-5.0
-4.0
-3.0
-2.0
-1.0
200
150
100
1.1
1.0
0.9
50
Capacitance vs. Drain-to-Source Voltage
0
0
-50
0
0
f = 1MHz
V
BV
DS
= -25V
DSS
-2.0
Transfer Characteristics
-10
Variation with Temperature
0
-4.0
V
V
GS
DS
T
j
-20
(volts)
(volts)
(
50
O
C)
1235 Bordeaux Drive, Sunnyvale, CA 94089
-6.0
T
(cont.)
A
-30
100
= -55
-8.0
125
C
C
O
O
C
C
25
ISS
RSS
O
C
-10
-40
150
4
-8.0
-6.0
-4.0
-2.0
1.4
1.2
1.0
0.8
0.6
-10
9.0
6.0
3.0
15
12
0
0
-50
V
0
0
(th)
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
and R
Tel: 408-222-8888
75 pF
V
-0.8
0.5
GS
= -5.0V
DS
0
Q
Variation with Temperature
R
G
DS(ON)
-1.6
(nanocoulombs)
I
1.0
D
(amperes)
@ -10V, -7.5A
T
V
j
(th)
(
50
O
V
@ -1.0mA
C)
DS
-2.4
1.5
www.supertex.com
= -10V
V
DS
= -40V
100
V
-3.2
2.0
GS
= -10V
200 pF
-4.0
2.5
150
2.0
1.6
1.2
0.8
0.4
0
TP0606