VN2210N3-P002 Supertex, VN2210N3-P002 Datasheet
VN2210N3-P002
Specifications of VN2210N3-P002
Related parts for VN2210N3-P002
VN2210N3-P002 Summary of contents
Page 1
... MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired ...
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... V = 25V 500mA 0V 25V 1.0MHz 5.0 5 25V, 8 600mA 25Ω GEN 8 600mA 0V 600mA PULSE OUTPUT R GEN D.U.T. INPUT ● Tel: 408-222-8888 ● www.supertex.com VN2106 I DRM (A) 1 25V = 75mA ...
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... Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics 2 1.6 1.2 0.8 0 (volts) DS Power Dissipation vs. Case Temperature 2.0 TO-92 1 100 125 T (°C) C Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-92 0 25° 0.001 0.01 0.1 1.0 t (seconds) p ● Tel: 408-222-8888 ● www.supertex.com VN2106 10V 150 10 ...
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... On-Resistance vs. Drain Current 10V 0.5 1.0 1.5 2.0 I (amperes and R Variation with Temperature GS(th) DS(ON) 1 10V, 0.5A DS(ON) 1.2 1 1mA GS(th) 0.8 0.6 - 100 T (°C) j Gate Drive Dynamic Characteristics 10V 40V 0.6 0 0.2 0.4 0.8 Q (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com VN2106 2.5 2.0 1.6 1.2 0.8 0.4 0 150 1.0 ...
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... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...