IS61LV12816L-10TLI-TR ISSI, Integrated Silicon Solution Inc, IS61LV12816L-10TLI-TR Datasheet - Page 12

• Manufacturer Part Number: IS61LV12816L-10TLI-TR
• Description: IC SRAM 2MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV12816L-10TLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 2M (128K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1053-2; IS61LV12816L-10TLI-TR

IS61LV12816L
DATA RETENTION SWITCHING CHARACTERISTICS
Note 1:
12
DATA RETENTION WAVEFORM
Symbol
V
I
t
t
DR
SDR
RDR
DR
Typical values are measured at V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
CE
V
V
DD
DD
DR
for Data Retention
DD
= 3.3V, T
t
SDR
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
See Data Retention Waveform
A
DD
= 25
= 2.0V, CE V
(CE Controlled)
O
C. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
DD
Data Retention Mode
CE
– 0.2V
V
DD
- 0.2V
Options
Com.
Ind.
Min.
2.0
t
—
—
RC
0
t
RDR
Typ.
0.7
—
—
—
—
(1)
Max.
ISSI
3.6
—
—
3
4
1-800-379-4774
Unit
mA
ns
ns
V
10/27/05
Rev. F
®