IS61LV12816L-10TLI-TR ISSI, Integrated Silicon Solution Inc, IS61LV12816L-10TLI-TR Datasheet - Page 5

IC SRAM 2MBIT 10NS 44TSOP

IS61LV12816L-10TLI-TR

Manufacturer Part Number
IS61LV12816L-10TLI-TR
Description
IC SRAM 2MBIT 10NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61LV12816L-10TLI-TR

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
2M (128K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1053-2
IS61LV12816L-10TLI-TR
IS61LV12816L
POWER SUPPLY CHARACTERISTICS
Symbol
Note:
1. At f = f
2. Typical values are measured at V
CAPACITANCE
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. F
10/27/05
I
I
I
CC
SB
SB
Symbol
C
C
1
2
IN
OUT
MAX
Parameter
V
Supply Current
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
(CMOS Inputs)
DD
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Operating
Parameter
Input Capacitance
Input/Output Capacitance
(1)
Test Conditions
V
I
V
V
CE V
V
CE V
V
V
OUT
DD
DD
IN
DD
IN
IN
= V
= Max., CE = V
= Max.,
= Max.,
= 0 mA, f = Max.
V
0.2V, f = 0
DD
DD
IH
IH
, f = max
or V
DD
– 0.2V, or
– 0.2V,
=3.3V, T
IL
IL
A
=25
o
C. Not 100% tested.
(1)
Com.
Com.
Com.
typ.
typ.
Conditions
V
Ind.
Ind.
(Over Operating Range)
Ind.
V
OUT
(2)
(2)
IN
= 0V
= 0V
1-800-379-4774
Max.
Min. Max.
6
8
-8 ns
700
65
70
50
30
35
3
4
Unit
pF
pF
Min. Max.
-10 ns
700
60
65
50
25
30
3
4
ISSI
Unit
mA
mA
mA
mA
A
®
5

Related parts for IS61LV12816L-10TLI-TR