2SC2712-GR(TE85L,F Toshiba, 2SC2712-GR(TE85L,F Datasheet

2SC2712-GR(TE85L,F

Manufacturer Part Number

2SC2712-GR(TE85L,F

Description

Transistors Bipolar - BJT 150mA 50V

Manufacturer

Toshiba

Datasheet

1.2SC2712-GRTE85LF.pdf (5 pages)

Specifications of 2SC2712-GR(TE85L,F

Product Category

Transistors Bipolar - BJT

Rohs

yes

Configuration

Single

Transistor Polarity

NPN

Collector- Base Voltage Vcbo

60 V

Collector- Emitter Voltage Vceo Max

50 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

0.15 A

Gain Bandwidth Product Ft

80 MHz

Dc Collector/base Gain Hfe Min

200

Maximum Operating Temperature

+ 125 C

Mounting Style

SMD/SMT

Package / Case

2-3F1A

Continuous Collector Current

150 mA

Dc Current Gain Hfe Max

400

Maximum Power Dissipation

150 mW

Factory Pack Quantity

3000

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Audio Frequency General Purpose Amplifier Applications

•

Absolute Maximum Ratings

Marking

High voltage and high current: V

Excellent h

High h

Low noise: NF = 1dB (typ.), 10dB (max)

Complementary to 2SA1162

Small package

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

FE:

Characteristics

linearity : h

= 70~700

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

= 0.95 (typ.)

= 0.1 mA)/ h

CEO

(Ta = 25°C)

Symbol

= 50 V, I

CBO

CEO

EBO

stg

2SC2712

= 150 mA (max)

−55~125

Rating

= 2 mA)

150

125

Unit

°C

Weight: 0.012 g (typ.)

JEDEC

JEITA

TOSHIBA

TO-236MOD

2-3F1A

SC-59

2007-11-01

2SC2712

Unit: mm

Related parts for 2SC2712-GR(TE85L,F

2SC2712-GR(TE85L,F Summary of contents

Page 1

... CEO C = 0 (Ta = 25°C) Symbol Rating V 60 CBO V 50 CEO V 5 EBO I 150 150 C T 125 j −55~125 T stg 1 2SC2712 Unit JEDEC TO-236MOD mA JEITA SC-59 mW TOSHIBA 2-3F1A °C Weight: 0.012 g (typ.) °C 2007-11-01 Unit: mm ...

Page 2

... I CE (sat MHz 0.1 mA kHz kΩ 2SC2712 Min Typ. Max Unit ⎯ ⎯ μA 0.1 ⎯ ⎯ μA 0.1 ⎯ 70 700 ⎯ 0.1 0.25 V ⎯ ⎯ 80 MHz ⎯ 2.0 3.5 pF ⎯ ...

Page 3

... 3 2SC2712 2007-11-01 ...

Page 4

... 4 2SC2712 2007-11-01 ...

Page 5

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SC2712 2007-11-01 ...

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